CGHV35060MP Fiches technique(PDF) - Cree, Inc

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CGHV35060MP Fiches technique (PDF) - Cree, Inc

CGHV35060MP Datasheet PDF - Cree, Inc


No de pièce	CGHV35060MP

Télécharger	CGHV35060MP Télécharger

Taille du fichier	573.73 Kbytes

Page	6 Pages

Fabricant	CREE [Cree, Inc]

Site Internet	http://www.cree.com/

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Description

60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations

CGHV35060MP Datasheet (PDF)

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CGHV35060MP Datasheet PDF - Cree, Inc


No de pièce	CGHV35060MP

Télécharger	CGHV35060MP Click to download

Taille du fichier	573.73 Kbytes

Page	6 Pages

Fabricant	CREE [Cree, Inc]

Site Internet	http://www.cree.com/

Logo

Description	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations

CGHV35060MP Fiches technique (HTML) - Cree, Inc

CGHV35060MP Datasheet HTML 1Page - Cree, Inc

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CGHV35060MP Datasheet HTML 6Page - Cree, Inc

Numéro de pièce similaire - CGHV35060MP

Fabricant	No de pièce	Fiches technique	Description
Cree, Inc	CGHV35060MP	1Mb / 8P	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Rev 1.0
WOLFSPEED, INC.	CGHV35060MP	2Mb / 11P	60 W, 2700-3800 MHz, 50 V GaN HEMT for S-Band Radar and LTE Base Stations Rev. 2.4, 2022-12-2
Cree, Inc	CGHV35060MP-AMP1	1Mb / 8P	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Rev 1.0
Cree, Inc	CGHV35060MP	1Mb / 8P	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Rev 1.0

Description similaire - CGHV35060MP

Fabricant	No de pièce	Fiches technique	Description
Cree, Inc	CGHV27200	696Kb / 11P	200 W, 2500-2700 MHz, GaN HEMT for LTE Rev 0.1
	CGH25120F	1Mb / 12P	120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Rev 3.1
	CGHV27060MP	1Mb / 8P	60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Rev 1.1
	CGHV27100	1Mb / 11P	100 W, 2500-2700 MHz, 50 V, GaN HEMT for LTE Rev 1.0
	CGHV27200	1Mb / 12P	200 W, 2500-2700 MHz, GaN HEMT for LTE Rev 1.0
	CGHV35150	853Kb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev 1.0
	CGHV35060MP	1Mb / 8P	60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Rev 1.0
	CGHV37400F	815Kb / 11P	400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
WOLFSPEED, INC.	CGHV35060MP	2Mb / 11P	60 W, 2700-3800 MHz, 50 V GaN HEMT for S-Band Radar and LTE Base Stations Rev. 2.4, 2022-12-2
WOLFSPEED, INC.	CGHV35150	1Mb / 10P	150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems Rev.1.4, 2022-12-2

À propos de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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