CGH27060F-TB Fiches technique(PDF) - Cree, Inc

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CGH27060F-TB Fiches technique (PDF) - Cree, Inc

CGH27060F-TB Datasheet PDF - Cree, Inc


No de pièce	CGH27060F-TB

Télécharger	CGH27060F-TB Télécharger

Taille du fichier	1631.41 Kbytes

Page	12 Pages

Fabricant	CREE [Cree, Inc]

Site Internet	http://www.cree.com/

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Description

60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

CGH27060F-TB Datasheet (PDF)

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CGH27060F-TB Datasheet PDF - Cree, Inc


No de pièce	CGH27060F-TB

Télécharger	CGH27060F-TB Click to download

Taille du fichier	1631.41 Kbytes

Page	12 Pages

Fabricant	CREE [Cree, Inc]

Site Internet	http://www.cree.com/

Logo

Description	60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz

CGH27060F-TB Fiches technique (HTML) - Cree, Inc

CGH27060F-TB Datasheet HTML 1Page - Cree, Inc

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CGH27060F-TB Datasheet HTML 10Page - Cree, Inc

Numéro de pièce similaire - CGH27060F-TB

Fabricant	No de pièce	Fiches technique	Description
Cree, Inc	CGH27060F	824Kb / 8P	60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Rev 1.0
WOLFSPEED, INC.	CGH27060F	4Mb / 12P	60 W Peak, 28 V, GaN HEMT for Linear Communications from VHF to 3 GHz Rev. 5.2, 2022-11-11

Description similaire - CGH27060F-TB

Fabricant	No de pièce	Fiches technique	Description
Cree, Inc	CGH27060F	824Kb / 8P	60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Rev 1.0
	CGH27015	1Mb / 12P	15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Rev 4.0
	CGH27030F	1Mb / 12P	30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Rev 4.0
	CGH35060F1	2Mb / 12P	60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Rev 3.1
	CGH35060F2	1Mb / 11P	60 W, 3100-3500 MHz, 28V, GaN HEMT Rev 4.0
	CGH27030	1Mb / 12P	30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz
WOLFSPEED, INC.	CGH27015	3Mb / 12P	15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Rev. 4.2, 2022-11-3
	CGH27030	2Mb / 12P	30 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Rev. 4.2, 2022-10-20
	CGH27060F	4Mb / 12P	60 W Peak, 28 V, GaN HEMT for Linear Communications from VHF to 3 GHz Rev. 5.2, 2022-11-11
	CGH35060F1_P1	1Mb / 12P	60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Rev. 3.3, 2022-10-28

À propos de Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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