MJD112 Fiches technique(PDF) - KEC(Korea Electronics)

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MJD112 Fiches technique (PDF) - KEC(Korea Electronics)

MJD112 Datasheet PDF - KEC(Korea Electronics)


No de pièce	MJD112

Télécharger	MJD112 Télécharger

Taille du fichier	394.6 Kbytes

Page	2 Pages

Fabricant	KEC [KEC(Korea Electronics)]

Site Internet	http://www.keccorp.com

Logo

Description

EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MJD112 Datasheet (PDF)

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Télécharger Fiches technique

MJD112 Datasheet PDF - KEC(Korea Electronics)


No de pièce	MJD112

Télécharger	MJD112 Click to download

Taille du fichier	394.6 Kbytes

Page	2 Pages

Fabricant	KEC [KEC(Korea Electronics)]

Site Internet	http://www.keccorp.com

Logo

Description	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)

MJD112 Fiches technique (HTML) - KEC(Korea Electronics)

MJD112 Datasheet HTML 1Page - KEC(Korea Electronics)

MJD112 Datasheet HTML 2Page - KEC(Korea Electronics)

MJD112 Détails du produit

MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.

FEATURES
• High DC Current Gain.
: hFE=1000(Min.), VCE=4V, IC=1A.
• Low Collector-Emitter Saturation Voltage.
• Straight Lead (IPAK, "L" Suffix)
• Complementary to MJD117/L.

Numéro de pièce similaire - MJD112

Fabricant	No de pièce	Fiches technique	Description
Motorola, Inc	MJD112	306Kb / 6P	SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
ON Semiconductor	MJD112	147Kb / 8P	Complementary Darlington Power Transistors August, 2004 ??Rev. 5
STMicroelectronics	MJD112	84Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Sep-1997
Fairchild Semiconductor	MJD112	51Kb / 5P	D-PAK for Surface Mount Applications
ON Semiconductor	MJD112	101Kb / 8P	Complementary Darlington Power Transistors January, 2006 ??Rev. 7

Description similaire - MJD112

Fabricant	No de pièce	Fiches technique	Description
Fairchild Semiconductor	TIP105	50Kb / 4P	Monolithic Construction With Built In Base- Emitter Shunt Resistors
KEC(Korea Electronics)	MJD117	394Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP112	74Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP112F	41Kb / 2P	EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP117	75Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
	TIP117F	42Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
SemiHow Co.,Ltd.	TIP100	744Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
	TIP125	510Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
	TIP106	750Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors
TAI-SAW TECHNOLOGY CO.,...	TIP140T	574Kb / 5P	Monolithic Construction With Built In Base-Emitter Shunt Resistors

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