| Fabricant | No de pièce | Fiches technique | Description |
 Silicon Laboratories |
AN256
|
210Kb / 8P |
INTEGRATED PHASE NOISE
|
 TEMEX |
RPT5032N
|
507Kb / 2P |
LTE phase noise compliant
|
 Infineon Technologies A... |
BGA7H1N6
|
1Mb / 19P |
Silicon Germanium Low Noise Amplifier for LTE
Revision 3.1, 2014-02-11 |
|
BGA7L1N6
|
1Mb / 22P |
Silicon Germanium Low Noise Amplifier for LTE
Revision 3.1, 2014-02-11 |
|
BGA7M1N6
|
1Mb / 22P |
Silicon Germanium Low Noise Amplifier for LTE
Revision 3.1, 2014-02-11 |
 NXP Semiconductors |
BGU8H1
|
106Kb / 11P |
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3-16 January 2017 |
|
BGU8L1
|
106Kb / 11P |
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3-16 January 2017 |
|
BGU8M1
|
106Kb / 11P |
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3-16 January 2017 |
 Maxim Integrated Produc... |
MAX2666
|
1Mb / 9P |
Tiny Low-Noise Amplifiers for HSPA/LTE
Rev 0; 8/10 |
 NXP Semiconductors |
BGU8L1UK
|
198Kb / 11P |
SiGe:C Low Noise Amplifier MMIC for LTE
Rev. 1-19 May 2015 |