| Fabricant | No de pièce | Fiches technique | Description |
New Japan Radio |
NJM2043
|
218Kb / 5P |
LOW-NOISE DUAL PRE-AMPLIFIER
|
Panasonic Semiconductor |
AN360
|
15Kb / 1P |
Low Noise Pre-Amplifier Circuit
|
Toshiba Semiconductor |
2SK246
|
163Kb / 3P |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
|
2SK3117
|
296Kb / 5P |
N CHANNEL MOS TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Sanyo Semicon Device |
FH103
|
49Kb / 4P |
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
|
FH104
|
49Kb / 4P |
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
|
FH105
|
63Kb / 5P |
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Toshiba Semiconductor |
2SK30ATM
|
600Kb / 4P |
Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications
|
Sanyo Semicon Device |
FH105A
|
484Kb / 8P |
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
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