NX8346TS Fiches technique(PDF) - California Eastern Labs

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NX8346TS Fiches technique (PDF) - California Eastern Labs

NX8346TS Datasheet PDF - California Eastern Labs


No de pièce	NX8346TS

Télécharger	NX8346TS Télécharger

Taille du fichier	195.06 Kbytes

Page	8 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

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Description

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8346TS Datasheet (PDF)

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Télécharger Fiches technique

NX8346TS Datasheet PDF - California Eastern Labs


No de pièce	NX8346TS

Télécharger	NX8346TS Click to download

Taille du fichier	195.06 Kbytes

Page	8 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

Logo

Description	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

NX8346TS Fiches technique (HTML) - California Eastern Labs

NX8346TS Datasheet HTML 1Page - California Eastern Labs

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NX8346TS Datasheet HTML 4Page - California Eastern Labs

NX8346TS Datasheet HTML 5Page - California Eastern Labs

NX8346TS Datasheet HTML 6Page - California Eastern Labs

NX8346TS Datasheet HTML 7Page - California Eastern Labs

NX8346TS Datasheet HTML 8Page - California Eastern Labs

Numéro de pièce similaire - NX8346TS

Fabricant	No de pièce	Fiches technique	Description
NEC	NX8346TS	89Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8346TS	164Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

Description similaire - NX8346TS

Fabricant	No de pièce	Fiches technique	Description
California Eastern Labs	NX8341	372Kb / 15P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8346TB	205Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341	351Kb / 13P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NEC	NX8346TB	102Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NEC	NX8346TS	89Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8369TB	213Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8369TB	214Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349TB	204Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349YK	253Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

À propos de California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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