The RF Sub–Micron MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs



Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

• Specified Two–Tone Performance @ 2000 MHz, 26 Volts

  Output Power = 10 Watts (PEP)

  Power Gain = 11 dB

  Efficiency = 30%

  Intermodulation Distortion = –30 dBc

• Specified Single–Tone Performance @ 2000 MHz, 26 Volts

  Output Power = 10 Watts (CW)

  Power Gain = 11 dB

  Efficiency = 40%

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• S–Parameter Characterization at High Bias Levels

• Excellent Thermal Stability

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts (CW) Output Power

• Gold Metallization for Improved Reliability