| Fabricant | No de pièce | Fiches technique | Description |
Stanson Technology |
STN4392
|
383Kb / 7P |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4426
|
362Kb / 6P |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
ST3406SRG
|
325Kb / 6P |
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4416
|
966Kb / 6P |
STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4480
|
742Kb / 6P |
STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4850
|
532Kb / 6P |
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN1810
|
966Kb / 7P |
STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4438
|
269Kb / 6P |
STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
STN4546
|
363Kb / 6P |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
|
ST2304SRG
|
630Kb / 6P |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
French ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
