DESCRIPTION
NPN double transistor in a SOT666 plastic package.
PNP complement: BC857BV.

FEATURES
• 300 mW total power dissipation
• Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package
• Excellent coplanarity due to straight leads
• Low collector capacitance
• Improved thermal behaviour due to flat leads
• Reduces number of components as replacement of two SC-75/SC-89 packaged BISS transistors
• Reduces required board space
• Reduces pick and place costs.

APPLICATIONS
• General purpose switching and amplification.