SILICON BIDIRECTIONAL DIACS

The glass passivated, three-layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current. The breakover symmetry is within four volts with a typical breakover voltage of DB-3 32 V, DB-4 40 V. These diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls.

Storage Temperature Range TS - 40 °C to +150 °C
Operating Temperature Range TJ - 40 °C to +100 °C