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GT40T302 Fiches technique (PDF) - Toshiba Semiconductor
GT40T302 Datasheet PDF - Toshiba Semiconductor
No de pièce GT40T302
Télécharger  GT40T302 Télécharger

Taille du fichier   173.24 Kbytes
Page   6 Pages
Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T302 Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
GT40T302 Datasheet PDF - Toshiba Semiconductor

No de pièce GT40T302
Télécharger  GT40T302 Click to download

Taille du fichier   173.24 Kbytes
Page   6 Pages
Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T302 Fiches technique (HTML) - Toshiba Semiconductor

GT40T302 Datasheet HTML 1Page - Toshiba Semiconductor GT40T302 Datasheet HTML 2Page - Toshiba Semiconductor GT40T302 Datasheet HTML 3Page - Toshiba Semiconductor GT40T302 Datasheet HTML 4Page - Toshiba Semiconductor GT40T302 Datasheet HTML 5Page - Toshiba Semiconductor GT40T302 Datasheet HTML 6Page - Toshiba Semiconductor

GT40T302 Détails du produit

Parallel Resonance Inverter Switching Applications

•  FRD included between emitter and collector
•  Enhancement mode
•  High speed  IGBT: tf= 0.23 μs (typ.) (IC= 40 A)
                        FRD: trr= 0.7 μs (typ.) (di/dt = −20 A/μs)
•  Low saturation voltage: VCE (sat)= 3.7 V (typ.) (IC= 40 A)




Numéro de pièce similaire - GT40T302

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