Description
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features
■ TYPICAL RDS(on) = 0.030 Ω @ 4.5 V
■ TYPICAL RDS(on) = 0.037 Ω @ 2.7 V
■ ULTRA LOW THRESHOLD GATE DRIVE (2.7 V)
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY

Applications
■ DC MOTOR DRIVE
■ DC-DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
■ POWER MANAGEMENT IN PORTABLE/DESKTOP PCs TYPE VDSS RDS(on) ID STS6NF20V 20 V < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) 6 A SO-8