[Description]
This is a Silicon NPN transistor in a TO-39 type case designed primarily for
amplifier and switching applications. This device features high breakdown
voltage low leakage current, low capacity, and beta useful over an extremely
wide current range.
Absolute Maximum Ratings:
Characteristic Symbol Rating
Collector-Base Voltage Vcbo 120V
Collector-Emitter Voltage Vceo 65V
Emitter - Base Voltage Vebo 7V
Continuous Collector Current Ic 1A
Total Device Dissipation (Tc = +25°C) Pd 800mW
Derate above 25°C 4.6mW/°C
Total Device Dissipation (Tc = +25°C) Pd 5W
Derate above 25°C 28.6mW/°C
Operating Junction Temperature Range Tj -65°C to +200°C
Storage Temperature Range Tstg -65°C to +200°C
Thermal Resistance, Junction-to-Case Rthjc 35°C/W
Thermal Resistance, Junction-to-Ambient Rthjc 175°C/W
Lead Temperature
Tl 300°C
(During Soldering, 1/16” from case, 60sec max.)
Electrical Characteristics: (Ta = +25ºC Unless otherwise specified)
Parameter Symbol Test Conditions Min. Max. Unit.
OFF Characteristics
Collector-Emitter Breakdown Voltage V(br)ceo Ic = 100mA, Ib = 0 65 -
Collector-Base Breakdown Voltage V(br)cbo Ic = 100µA, Ie = 0 120 - V
Emitter-Base Breakdown Voltage V(br)ebo Ie = 100µA, Ic = 0 7 -
Vcb = 60V, Ie = 0 - 0.002
Collector-Cut-Off Current Icbo
Vcb = 60V, Ie = 0, Ta = +150ºC - 2 µA
Emitter Cut-Off Current Iebo Vbe = 5V, Ic = 0 - 0.002
On Characteristics (Note 1)
Vce = 10V, Ic = 0.1mA 20 - -
DC Current Gain hfe Vce = 10V, Ic = 10mA 35 - -
Vce = 10V, Ic = 150mA 40 120 -