Features
■ SUPPLY VOLTAGE
■ VDD = 2.7V to 3.6V for Program, Erase and
■ Read
■ VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
■ VPP = 12V for fast Program (optional)
■ HIGH PERFORMANCE
■ Access Time: 80, 90 and 100ns
■ 56MHz Effective Zero Wait-State Burst Read
■ Synchronous Burst Reads
■ Asynchronous Page Reads
■ HARDWARE BLOCK PROTECTION
■ WP pin Lock Program and Erase
■ SOFTWARE BLOCK PROTECTION
■ Tuning Protection to Lock Program and Erase with 64 bit User Programmable Password (M58BW016B version only)
■ OPTIMIZED for FDI DRIVERS
■ Fast Program / Erase suspend latency
■ time < 6µs
■ Common Flash Interface
■ MEMORY BLOCKS
■ 8 Parameters Blocks (Top or Bottom)
■ 31 Main Blocks
■ LOW POWER CONSUMPTION
■ 5µA Typical Deep Power Down
■ 60µA Typical Standby
■ Automatic Standby after Asynchronous Read
■ ELECTRONIC SIGNATURE
■ Manufacturer Code: 20h
■ Top Device Code M58BW016xT: 8836h
■ Bottom Device Code M58BW016xB: 8835h