Description
The TP70H300G4JSGB 700V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device that uses Renesas’ Gen IV platform. It combines a state-of-theart high-voltage GaN HEMT with a low-voltage silicon MOSFET to offer superior reliability and performance.
The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features
■ Gen IV technology
■ JEDEC-qualified GaN technology
■ Dynamic RDS(on)eff production tested
■ Robust design, defined by
● Transient over-voltage capability
● Operation with E-mode gate drivers without need for Zener protection.
■ Very low QRR
■ Reduced crossover loss
■ RoHS compliant and Halogen-free packaging
■ 2 kV HBM ESD rating

Applications
■ Consumer
■ Power adapters
■ Low power SMPS
■ Lighting