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IS43TR16640CL Fiches technique (PDF) - Integrated Silicon Solution, Inc

IS43TR16640CL Datasheet PDF - Integrated Silicon Solution, Inc
No de pièce IS43TR16640CL
Télécharger  IS43TR16640CL Télécharger
Taille du fichier   4290.92 Kbytes
Page   89 Pages
Fabricant  ISSI [Integrated Silicon Solution, Inc]
Site Internet  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 128MX8, 64MX16 1Gb DDR3 SDRAM

IS43TR16640CL Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
IS43TR16640CL Datasheet PDF - Integrated Silicon Solution, Inc

No de pièce IS43TR16640CL
Télécharger  IS43TR16640CL Click to download

Taille du fichier   4290.92 Kbytes
Page   89 Pages
Fabricant  ISSI [Integrated Silicon Solution, Inc]
Site Internet  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Description 128MX8, 64MX16 1Gb DDR3 SDRAM

IS43TR16640CL Fiches technique (HTML) - Integrated Silicon Solution, Inc


IS43TR16640CL Détails du produit

FEATURES
• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
• High speed data transfer rates with system
frequency up to 1066 MHz
• 8 internal banks for concurrent operation
• 8n-bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based
on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or
Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval:
7.8 μs (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 μs (8192 cycles/32 ms) Tc= 85°C to 105°C
1.95 μs (8192 cycles/16 ms) Tc= 105°C to 115°C
0.97 μs (8192 cycles/8 ms) Tc= 115°C to 125°C




Numéro de pièce similaire - IS43TR16640CL

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Description similaire - IS43TR16640CL

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À propos de Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.




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