Features
■ High noise immunity characterized by 50kV/μs (Typ.) common mode rejection @ VCM = 2,000V
■ Guaranteed operating temperature range of -40°C to +100°C
■ 3A peak output current for medium power MOSFET/IGBT
■ Fast switching speed
– 210ns max. propagation delay
– 65ns max pulse width distortion
■ Fast output rise/fall time
– Offers lower dynamic power dissipation
■ 250kHz maximum switching speed
■ Wide VDD operating range from 15V to 30V
■ Use of P-Channel MOSFETs at output stage enables output voltage swing close to the supply rail (rail-to-rail output)
■ Under voltage lockout protection (UVLO) with hysteresis – optimized for driving IGBTs
■ Safety and regulatory approvals
– UL1577, 5,000 VAC RMS for 1 min.
– DIN EN/IEC 60747-5-2, 1,414 peak working insulation voltage
• Minimum creepage distance of 8.0mm
• Minimum clearance distance of 8mm to 16mm (option TV or TSV)
• Minimum insulation thickness of 0.5mm

Applications
■ Plasma Display Panel
■ High performance DC/DC convertor
■ High performance switch mode power supply
■ High performance uninterruptible power supply
■ Isolated Power MOSFET/IGBT gate drive

Description
The FOD3184 is a 3A Output Current, High Speed MOSFET/IGBT Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETS/IGBT used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters.
The device is packaged in an 8-pin dual in-line housing compatible with 260°C reflow processes for lead free solder compliance.