1 Features
• Radiation Performance
– Total Ionizing Dose (TID) Characterized
(ELDRS-Free) up to 50krad(Si)
– TID RLAT up to 30krad(Si)
– Single-Event Latch-up (SEL) Immune to LET up
to 43MeV-cm2/mg at 125℃
– Single-event functional interrupt (SEFI) and
single-event transient (SET) characterized LET
up to 43MeV-cm2/mg
• Space Enhanced Plastic (Space EP)
– Meets NASA ASTM E595 Outgassing Spec
– Military Temp Range (-55℃ to 125℃)
• 1-channel diode input
• Current transfer ratio (CTR) at IF = 5mA, VCE = 5V:
100% to 155%
• High collector-emitter voltage: VCE (max) = 30V
• Robust SiO2 isolation barrier
– Isolation rating: 3750VRMS
– Working voltage: 500VRMS, 707VPK
– Surge capability: up to 10kV
• Response time: 3μs (typical) at VCE = 10V, IC =
2mA, RL = 100Ω
• Small 4-pin package (DFG)
• Safety-related certifications:
– UL 1577 recognition
– DIN EN IEC 60747-17 (VDE 0884-17)
conformity per VDE

2 Applications
• Satellite electrical power systems (EPS)
• Communications Payload
• Radar Imaging Payload

3 Description
The ISOS510 radiation-tolerant device is a singlechannel,
current-driven, analog isolator with transistor
output. The device offers significant reliability and
performance advantages compared to other currentdriven
analog isolators, including high bandwidth,
low turn-off delay, low power consumption, wider
temperature ranges, flat current transfer ratio (CTR),
and tight process controls resulting in small part-topart
skew. These performance advantages stay stable
across radiation, temperature, and lifetime.
ISOS510 is offered in small a SOIC-4 package
with 2.54mm pin pitch, supporting a 3.75kVRMS
isolation rating . The high performance and reliability
of ISOS510 enables these devices to be used
in aerospace & defense applications such as
feedback loops in isolated DC/DC modules, satellite
propulsion power processing units, spacecraft battery
management systems, and more.