TPCP8H01 Fiches technique(PDF) - Toshiba Semiconductor

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TPCP8H01 Fiches technique (PDF) - Toshiba Semiconductor

TPCP8H01 Datasheet PDF - Toshiba Semiconductor


No de pièce	TPCP8H01

Télécharger	TPCP8H01 Télécharger

Taille du fichier	253.94 Kbytes

Page	8 Pages

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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Description

TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

TPCP8H01 Datasheet (PDF)

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Télécharger Fiches technique

TPCP8H01 Datasheet PDF - Toshiba Semiconductor


No de pièce	TPCP8H01

Télécharger	TPCP8H01 Click to download

Taille du fichier	253.94 Kbytes

Page	8 Pages

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

Logo

Description	TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type

TPCP8H01 Fiches technique (HTML) - Toshiba Semiconductor

TPCP8H01 Datasheet HTML 1Page - Toshiba Semiconductor

TPCP8H01 Datasheet HTML 2Page - Toshiba Semiconductor

TPCP8H01 Datasheet HTML 3Page - Toshiba Semiconductor

TPCP8H01 Datasheet HTML 4Page - Toshiba Semiconductor

TPCP8H01 Datasheet HTML 5Page - Toshiba Semiconductor

TPCP8H01 Datasheet HTML 6Page - Toshiba Semiconductor

TPCP8H01 Datasheet HTML 7Page - Toshiba Semiconductor

TPCP8H01 Datasheet HTML 8Page - Toshiba Semiconductor

TPCP8H01 Détails du produit

HIGH-SPEED SWITCHING APPLICATIONS
LORD SWITCHING APPLICATIONS
STROBE FLASH APPLICATIONS

• Multi-chip discrete device; built-in NPN transistor for main switch and N-ch MOS FET for drive
• High DC current gain: hFE = 250 to 400 (IC = 0.5 A) (NPN transistor)
• Low collector-emitter saturation voltage: VCE (sat) = 0.13 V (max)
(NPN transistor)
• High-speed switching: tf = 25 ns (typ.) (NPN transistor)

Numéro de pièce similaire - TPCP8H01

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	TPCP8H01	1Mb / 73P	Bipolar Small-Signal Transistors

Description similaire - TPCP8H01

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	TPCP8H02	249Kb / 8P	TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type, Field Effect Transistor Silicon N Channel MOS Type
	TPCP8F01	248Kb / 8P	TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type
	HN1K04FU	124Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM3K17FU	234Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM6N04FU	175Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	TK8A60DA	266Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM3K35CT	215Kb / 5P	TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
	SSM3K44FS	171Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM3K44MFV	204Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	SSM3K116TU	166Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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