1 Features
• VID V62/25635
• Radiation - Total Ionizing Dose (TID):
– TID performance assurance up to 30krad(Si)
– Radiation Lot Acceptance Testing (RLAT) for
every wafer lot up to 30krad(Si)
• Radiation - Single-Event Effects (SEE):
– Single Event Latch-Up (SEL) immune up to
43MeV-cm2 /mg at 125°C
– Single Event Transient (SET) characterized up
to LET = 47.5MeV-cm2 /mg
• Space Enhanced Plastic
– Operating temperature from –55°C to +125°C
– Controlled baseline
– Au bondwire and NiPdAu lead finish
– Outgassing test performed per ASTM E595
– One fabrication, assembly, and test site
– Extended product life cycle
– Product traceability
• Wide common-mode voltage:
– Operational voltage: 2.7V to 80V
– Survival voltage: −20V to 85V
• Excellent CMRR:
– 160dB DC
– 85dB AC at 50kHz
• Gain of 20V/V
– Gain error: ±0.1% (maximum)
– Gain drift: ±1.5ppm/°C
• Offset voltage: ±12μV (maximum)
• Offset drift: ±0.05μV/°C
• High bandwidth: 1.1MHz
• Slew rate: 2V/μs
• Quiescent current: 370μA

2 Applications
• Satellite electrical power system (EPS)
• Command and data handling (C&DH)
• Radar imaging payload
• Communications payload

3 Description
The INA950-SEP is an ultra-precise, current-sense amplifier that can measure voltage drops across shunt
resistors over a wide common-mode range from 2.7V to 80V. The ultra-precise current measurement accuracy
is achieved thanks to the combination of an ultra-low offset voltage of ±12μV (maximum), a small gain error
of ±0.1% (maximum), and a high DC CMRR of 160dB (typical). The INA950-SEP is not only designed for DC
current measurement, but also for high-speed applications (such as fast overcurrent protection, for example)
with a high bandwidth of 1.1MHz and an 85dB AC CMRR (at 50kHz).
The INA950-SEP provides the capability to make ultra-precise current measurements by sensing the voltage
drop across a shunt resistor over a wide common- mode range from 2.7V to 80V. The INA950-SEP is available
in the TSSOP-8 package.
The INA950-SEP operates from a single 2.7V to 5.5V supply while only drawing 370μA from the supply (typical).
The low offset of the zero-drift architecture enables current sensing with low ohmic shunts as specified over the
operating temperature range (−55°C to 125°C).