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K9F1208X0C Fiches technique (PDF) - Samsung semiconductor

K9F1208X0C Datasheet PDF - Samsung semiconductor
No de pièce K9F1208X0C
Télécharger  K9F1208X0C Télécharger
Taille du fichier   824.15 Kbytes
Page   38 Pages
Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64M x 8 Bits NAND Flash Memory

K9F1208X0C Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
K9F1208X0C Datasheet PDF - Samsung semiconductor

No de pièce K9F1208X0C
Télécharger  K9F1208X0C Click to download

Taille du fichier   824.15 Kbytes
Page   38 Pages
Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 64M x 8 Bits NAND Flash Memory

K9F1208X0C Fiches technique (HTML) - Samsung semiconductor


K9F1208X0C Détails du produit

GENERAL DESCRIPTION

Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input.



FEATURES

•Voltage Supply

- 1.8V Device(K9F1208R0C) : 1.65V ~ 1.95V

- 2.7V Device(K9F1208B0C) : 2.5V ~ 2.9V

- 3.3V Device(K9F1208U0C) : 2.7V ~ 3.6V

•Organization

- Memory Cell Array : (64M + 2M) x 8bits

- Data Register : (512 + 16) x 8bits

•Automatic Program and Erase

- Page Program : (512 + 16) x 8bits

- Block Erase : (16K + 512)Bytes

•Page Read Operation

- Page Size : (512 + 16)Bytes

- Random Access : 15µs(Max.)

- Serial Page Access : 42ns(Min.)

•Fast Write Cycle Time

- Program time : 200µs(Typ.)

- Block Erase Time : 2ms(Typ.)

•Command/Address/Data Multiplexed I/O Port

•Hardware Data Protection

- Program/Erase Lockout During Power Transitions

•Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles (with 1bit/512Byte ECC)

- Data Retention : 10 Years

•Command Register Operation

•Unique ID for Copyright Protection

•Package

- K9F1208U0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1208X0C-JCB0/JIB0: Pb-Free Package 63-Ball FBGA(8.5 x 13 x 1.2mmt)

- K9F1208B0C-PCB0/PIB0 : Pb-Free Package 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)




Numéro de pièce similaire - K9F1208X0C

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Description similaire - K9F1208X0C

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