ADM35P06E Fiches technique(PDF) - Advanced (Shenzhen) Electronics Co.,Ltd

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ADM35P06E Fiches technique (PDF) - Advanced (Shenzhen) Electronics Co.,Ltd

ADM35P06E Datasheet PDF - Advanced (Shenzhen) Electronics Co.,Ltd


No de pièce	ADM35P06E

Télécharger	ADM35P06E Télécharger

Taille du fichier	520.61 Kbytes

Page	5 Pages

Fabricant	ADV [Advanced (Shenzhen) Electronics Co.,Ltd]

Site Internet	http://www.advsemi.com/en/

Logo

Description

P-Channel Logic Level Enhancement Mode Field Effect Transistor

ADM35P06E Datasheet (PDF)

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Télécharger Fiches technique

ADM35P06E Datasheet PDF - Advanced (Shenzhen) Electronics Co.,Ltd


No de pièce	ADM35P06E

Télécharger	ADM35P06E Click to download

Taille du fichier	520.61 Kbytes

Page	5 Pages

Fabricant	ADV [Advanced (Shenzhen) Electronics Co.,Ltd]

Site Internet	http://www.advsemi.com/en/

Logo

Description	P-Channel Logic Level Enhancement Mode Field Effect Transistor

ADM35P06E Fiches technique (HTML) - Advanced (Shenzhen) Electronics Co.,Ltd

ADM35P06E Datasheet HTML 1Page - Advanced (Shenzhen) Electronics Co.,Ltd

ADM35P06E Datasheet HTML 2Page - Advanced (Shenzhen) Electronics Co.,Ltd

ADM35P06E Datasheet HTML 3Page - Advanced (Shenzhen) Electronics Co.,Ltd

ADM35P06E Datasheet HTML 4Page - Advanced (Shenzhen) Electronics Co.,Ltd

ADM35P06E Datasheet HTML 5Page - Advanced (Shenzhen) Electronics Co.,Ltd

ADM35P06E Détails du produit

Features:
● Low Gate Charge for Fast Switching Application
● Fast Switching
● Improved dv/dt Capability
● Green Device Available

Description:
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. design to provide excellent RDS(ON) with low gate charge.provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.

Numéro de pièce similaire - ADM35P06E

Fabricant	No de pièce	Fiches technique	Description
Advanced (Shenzhen) Ele...	ADM35P03Z	405Kb / 4P	P-Channel Logic Level Enhancement Mode Field Effect Transistor Feb,2018 -Rev.1.02

Description similaire - ADM35P06E

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