| Fabricant | No de pièce | Fiches technique | Description |
 Toshiba Semiconductor |
2SK3130
|
203Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
06-Jul-2004 |
|
2SJ620
|
225Kb / 6P |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
11-Sep-2002 |
|
2SK3342
|
129Kb / 3P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)
25-Jan-2002 |
|
2SK3310
|
234Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
|
|
2SK3387
|
216Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)
22-Jul-2002 |
|
2SK2312
|
715Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−??MOSV)
|
|
2SK3565
|
218Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV
2013-11-01 |
|
2SK4106
|
181Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2009-09-29 |
|
K4110
|
199Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2009-09-29 |
|
K8A55DA
|
297Kb / 6P |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
2013-11-01 |