Description Pinout
Common drain N-channel enhancement mode power field effect transistor 8205A/8205B/8205C
It features fast switching, ultra-low on-resistance and high cost performance.
8205A/8205B/8205C are suitable for designing circuits for battery protection or low-voltage switching.

2. Features
Low on-resistance
Low drive current
Low gate voltage 2.5V

DSB=20V
IDB =6A @ V B
GSB =4.5V B
8205A:
RDS(ON) B
<32m B
Ω@VGSB
=4.5V B
8205B:
RB
DS(ON)<35m B
Ω@VB
GSB
=4.5V
8205C:
RBDS(ON)<38m B
Ω@VB
GS =4.5V

3. Application areas
Lithium battery charging protection
Power management
Portable devices
load switch