APT10030L2VR Fiches technique(PDF) - Advanced Power Technology

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APT10030L2VR Fiches technique (PDF) - Advanced Power Technology

APT10030L2VR Datasheet PDF - Advanced Power Technology


No de pièce	APT10030L2VR

Télécharger	APT10030L2VR Télécharger

Taille du fichier	132.23 Kbytes

Page	4 Pages

Fabricant	ADPOW [Advanced Power Technology]

Site Internet	http://www.advpowertech.com

Logo

Description

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT10030L2VR Datasheet (PDF)

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APT10030L2VR Datasheet PDF - Advanced Power Technology


No de pièce	APT10030L2VR

Télécharger	APT10030L2VR Click to download

Taille du fichier	132.23 Kbytes

Page	4 Pages

Fabricant	ADPOW [Advanced Power Technology]

Site Internet	http://www.advpowertech.com

Logo

Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT10030L2VR Fiches technique (HTML) - Advanced Power Technology

APT10030L2VR Datasheet HTML 1Page - Advanced Power Technology

APT10030L2VR Datasheet HTML 2Page - Advanced Power Technology

APT10030L2VR Datasheet HTML 3Page - Advanced Power Technology

APT10030L2VR Datasheet HTML 4Page - Advanced Power Technology

Numéro de pièce similaire - APT10030L2VR

Fabricant	No de pièce	Fiches technique	Description
Advanced Power Technolo...	APT10030L2VR	78Kb / 2P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Description similaire - APT10030L2VR

Fabricant	No de pièce	Fiches technique	Description
Advanced Power Technolo...	APT1001R1BVFR	70Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10040B2VFR	40Kb / 2P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10043JVR	73Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10050B2VR	59Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10050JVFR	70Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10M09B2VFR	41Kb / 2P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10M25BVFR	69Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10M25SVR	68Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
	APT10M30AVR	66Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT20M11JVFR	74Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

À propos de Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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