NX7663JB-BC Fiches technique(PDF) - California Eastern Labs

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NX7663JB-BC Fiches technique (PDF) - California Eastern Labs

NX7663JB-BC Datasheet PDF - California Eastern Labs


No de pièce	NX7663JB-BC

Télécharger	NX7663JB-BC Télécharger

Taille du fichier	957.45 Kbytes

Page	6 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

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Description

InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

NX7663JB-BC Datasheet (PDF)

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Télécharger Fiches technique

NX7663JB-BC Datasheet PDF - California Eastern Labs


No de pièce	NX7663JB-BC

Télécharger	NX7663JB-BC Click to download

Taille du fichier	957.45 Kbytes

Page	6 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

Logo

Description	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

NX7663JB-BC Fiches technique (HTML) - California Eastern Labs

NX7663JB-BC Datasheet HTML 1Page - California Eastern Labs

NX7663JB-BC Datasheet HTML 2Page - California Eastern Labs

NX7663JB-BC Datasheet HTML 3Page - California Eastern Labs

NX7663JB-BC Datasheet HTML 4Page - California Eastern Labs

NX7663JB-BC Datasheet HTML 5Page - California Eastern Labs

NX7663JB-BC Datasheet HTML 6Page - California Eastern Labs

Numéro de pièce similaire - NX7663JB-BC

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	NX7663JB-BC	159Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
Renesas Technology Corp	NX7663JB-BC	151Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

Description similaire - NX7663JB-BC

Fabricant	No de pièce	Fiches technique	Description
NEC	NDL7515P	61Kb / 8P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
NEC	NDL7565P	59Kb / 8P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
California Eastern Labs	NX7363JB-BC	968Kb / 6P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
California Eastern Labs	NX7563JB-BC	978Kb / 6P	InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
Renesas Technology Corp	NX7363JB-BC	158Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
	NX7563JB-BC	160Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
	NX7663JB-BC	159Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
	NX7363JB-BC	151Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
	NX7563JB-BC	152Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
	NX7663JB-BC	151Kb / 8P	LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION

À propos de California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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