NE662M16 Fiches technique(PDF) - California Eastern Labs

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NE662M16 Fiches technique (PDF) - California Eastern Labs

NE662M16 Datasheet PDF - California Eastern Labs


No de pièce	NE662M16

Télécharger	NE662M16 Télécharger

Taille du fichier	175.62 Kbytes

Page	10 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

Logo

Description

NPN SILICON HIGH FREQUENCY TRANSISTOR

NE662M16 Datasheet (PDF)

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Télécharger Fiches technique

NE662M16 Datasheet PDF - California Eastern Labs


No de pièce	NE662M16

Télécharger	NE662M16 Click to download

Taille du fichier	175.62 Kbytes

Page	10 Pages

Fabricant	CEL [California Eastern Labs]

Site Internet	http://www.cel.com

Logo

Description	NPN SILICON HIGH FREQUENCY TRANSISTOR

NE662M16 Fiches technique (HTML) - California Eastern Labs

NE662M16 Datasheet HTML 1Page - California Eastern Labs

NE662M16 Datasheet HTML 2Page - California Eastern Labs

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NE662M16 Datasheet HTML 4Page - California Eastern Labs

NE662M16 Datasheet HTML 5Page - California Eastern Labs

NE662M16 Datasheet HTML 6Page - California Eastern Labs

NE662M16 Datasheet HTML 7Page - California Eastern Labs

NE662M16 Datasheet HTML 8Page - California Eastern Labs

NE662M16 Datasheet HTML 9Page - California Eastern Labs

NE662M16 Datasheet HTML 10Page - California Eastern Labs

NE662M16 Détails du produit

DESCRIPTION
NECs NE662M16 is fabricated using NECs UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance.
NECs new low profile/flat lead style "M16" package is ideal for todays portable wireless applications. The NE662M16 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.

FEATURES
• HIGH GAIN BANDWIDTH: fT = 25 GHz
• LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
• HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
• NEW LOW PROFILE M16 PACKAGE:
• Flat Lead Style with a height of just 0.50mm

Numéro de pièce similaire - NE662M16

Fabricant	No de pièce	Fiches technique	Description
NEC	NE662M16	63Kb / 9P	NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC	NE662M16-T3	63Kb / 9P	NPN SILICON HIGH FREQUENCY TRANSISTOR

Description similaire - NE662M16

Fabricant	No de pièce	Fiches technique	Description
Advanced Semiconductor	LT1001A	13Kb / 1P	NPN SILICON HIGH FREQUENCY TRANSISTOR REV. A
NEC	NE662M16	63Kb / 9P	NPN SILICON HIGH FREQUENCY TRANSISTOR
Advanced Semiconductor	BLX65S	28Kb / 1P	NPN SILICON HIGH FREQUENCY TRANSISTOR
List of Unclassifed Man...	NE696M01	105Kb / 6P	NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	UPA810T	207Kb / 3P	NPN SILICON HIGH FREQUENCY TRANSISTOR
Advanced Semiconductor	MRF586	17Kb / 1P	NPN SILICON HIGH FREQUENCY TRANSISTOR
New Jersey Semi-Conduct...	2N6376	117Kb / 1P	NPN SILICON HIGH-FREQUENCY TRANSISTOR
California Eastern Labs	UPA801T	462Kb / 7P	NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	UPA802T	606Kb / 9P	NPN SILICON HIGH FREQUENCY TRANSISTOR
Central Semiconductor C...	CM5943	97Kb / 2P	NPN SILICON HIGH FREQUENCY TRANSISTOR

À propos de California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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