1 Features
• Drives two N-channel MOSFETs in half-bridge
configuration
• 8-V typical undervoltage lockout on GVDD
• 107-V absolute maximum voltage on BST
• –19.5-V absolute maximum negative transient
voltage handling on SH
• 0.5-A/0.8-A peak source/sink currents
• 475-ns typical fixed internal dead-time
• Built-in cross conduction prevention
• 115-ns typical propagation delay
• Inverting input pin INL

2 Applications
• Brushless-DC (BLDC) motors
• Permanent magnet synchronous motors (PMSM)
• Servo and stepper motor drives
• Cordless vacuum cleaners
• Cordless garden and power tools
• E-bikes and e-scooters
• Battery test equipment
• Offline uninterruptible power supply (UPS)
• General-purpose MOSFET or IGBT driver

3 Description
The LM2103 is a compact, high-voltage gate driver
designed to drive both the high-side and the low-side
N-channel MOSFETs in a synchronous buck or a halfbridge
configuration. The INL inverting input allows
the driver to be used in either dual or single PWM
input applications.
The fixed dead-time and the –1-V DC and –19.5-
V transient negative voltage handling on the SH
pin improve the system robustness in high noise
applications. The LM2103 is available in an 8-pin
SOIC package compatible with industry standard
pinouts. Undervoltage lockout (UVLO) is provided on
both the low-side and the high-side power rails for
protection during power up and power down.