PTVA120251EA-V2-R0 Fiches technique(PDF) - WOLFSPEED, INC.

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PTVA120251EA-V2-R0 Fiches technique (PDF) - WOLFSPEED, INC.

PTVA120251EA-V2-R0 Datasheet PDF - WOLFSPEED, INC.


No de pièce	PTVA120251EA-V2-R0

Télécharger	PTVA120251EA-V2-R0 Télécharger

Taille du fichier	787.93 Kbytes

Page	14 Pages

Fabricant	WOLFSPEED [WOLFSPEED, INC.]

Site Internet	https://www.wolfspeed.com/

Logo

Description

Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz

PTVA120251EA-V2-R0 Datasheet (PDF)

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PTVA120251EA-V2-R0 Datasheet PDF - WOLFSPEED, INC.


No de pièce	PTVA120251EA-V2-R0

Télécharger	PTVA120251EA-V2-R0 Click to download

Taille du fichier	787.93 Kbytes

Page	14 Pages

Fabricant	WOLFSPEED [WOLFSPEED, INC.]

Site Internet	https://www.wolfspeed.com/

Logo

Description	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 – 1400 MHz

PTVA120251EA-V2-R0 Fiches technique (HTML) - WOLFSPEED, INC.

PTVA120251EA-V2-R0 Datasheet HTML 1Page - WOLFSPEED, INC.

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PTVA120251EA-V2-R0 Datasheet HTML 6Page - WOLFSPEED, INC.

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PTVA120251EA-V2-R0 Datasheet HTML 10Page - WOLFSPEED, INC.

PTVA120251EA-V2-R0 Détails du produit

Description
The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include
high gain and a thermally-enhanced package with bolt-down flange.
Manufactured with Wolfspeed's advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
Features
• Unmatched input and output
• High gain and efficiency
• Integrated ESD protection
• ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS-compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at POUT = 25 W, under CW conditions

Numéro de pièce similaire - PTVA120251EA-V2-R0

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	PTVA120251EA	1Mb / 14P	Unmatched input and output
Infineon Technologies A...	PTVA120251EA	1Mb / 14P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz Rev. 04.2, 2016-04-19
Cree, Inc	PTVA120251EA	876Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz
Infineon Technologies A...	PTVA120251EAV2R0	1Mb / 14P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz Rev. 04.2, 2016-04-19
Infineon Technologies A...	PTVA120251EAV2R0XTMA1	1Mb / 14P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz Rev. 04.2, 2016-04-19

Description similaire - PTVA120251EA-V2-R0

Fabricant	No de pièce	Fiches technique	Description
Infineon Technologies A...	PTVA120501EA	1Mb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz Rev. 02.1, 2016-05-26
	PTVA120251EA	1Mb / 14P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz Rev. 04.2, 2016-04-19
	PTVA120121M	414Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 ??1400 MHz Rev. 02.1, 2017-02-03
	PTVA120252MT	453Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 ??1400 MHz Rev. 03.4, 2017-02-07
Cree, Inc	PTVA120121M	530Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 500 ??1400 MHz
	PTVA120251EA	876Kb / 14P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 50 V, 500 ??1400 MHz
	PTVA120252MT	530Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 ??1400 MHz
	PTVA120501EA	683Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 ??1400 MHz
WOLFSPEED, INC.	PTVA120252MT	553Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 25 W, 48 V, 500 – 1400 MHz Rev. 04.1, 2022-02-13
WOLFSPEED, INC.	PTVA120501EA	695Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 – 1400 MHz Rev. 04, 2023-07-10

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