Description
With the performance advantages of a Silicon Carbide (SiC)
Schottky Barrier diode, power electronics systems can expect
to meet higher efficiency standards than Si-based solutions,
while also reaching higher frequencies and power densities.
SiC diodes can be easily paralleled to meet various application
demands, without concern of thermal runaway. In combination
with the reduced cooling requirements and improved thermal
performance of SiC products, SiC diodes are able to provide
lower overall system costs in a variety of diverse applications.
Features
• Low Forward Voltage (VF
) Drop with Positive
Temperature Coefficient
• Zero Reverse Recovery Current / Forward
Recovery Voltage
• Temperature-Independent Switching Behavior
• Low Profile Package with Low Inductance
Applications
• Enterprise Power, Server, & Telecom
Power Supplies
• Switched Mode Power Supplies
• Industrial Power Supplies
• Boost Power Factor Correction
• Bootstrap Diode
• LLC Clamping