NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD

FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5435, 2SC5600)
Q1: Built-in high-gain transistor
fT = 12.0 GHz TYP., ½S21e½2 = 8.5 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
fT = 5.0 GHz TYP., ½S21e½2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
• 6-pin lead-less minimold package