Features
• DLA SMD# 5962-15248
• Fabricated using P6 SOI process technology
• Rail-to-rail operation
• No latch-up
• Low rDS(ON). . . . . . . . . . . . . . . . . . . . . . . . . .<120Ω (maximum)
• Single supply operation . . . . . . . . . . . . . . . . . . . . . . 3V to 5.5V
• Adjustable logic threshold control
• Cold sparing capable . . . . . . . . . . . . . . . . . . . . . . . . -0.4V to 7V
• Analog overvoltage range . . . . . . . . . . . . . . . . . . . . -0.4V to 7V
• Switch input off leakage . . . . . . . . . . . . . . . . . . . . . . . . . 120nA
• Transition times (tAHL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70ns
• Internally grounded metal lid
• Break-before-make switching
• ESD protection ≥5kV (HBM)
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation acceptance testing
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . .75krad(Si)
Note: All lots were assurance tested to 75krad
(0.01rad(Si)/s) wafer-by-wafer.
• SEE hardness (see SEE report for details)
- SEL/SEB LETTH (V+ = 6.3V). . . . . . . . . . . . . 60MeV•cm2/mg
Applications
• Telemetry signal processing
• Harsh environments
• Down-hole drilling