Features
• Voltage Range: 1.65 V - 3.6 V
• 32-Mbit Flash Memory
• Flexible 256-byte page erase architecture
• Serial Peripheral Interface (SPI) compatible
• Supports SPI modes 0 and 3
• Supports SPI single mode operation (1-1-1)
• Supports dual output operation (1-1-2)
• Supports quad output operation (1-1-4)
• Supports quad XiP operation (1-4-4 and
0-4-4)
• 133 MHz maximum operating frequency
• Clock-to-output of 8 ns
• Flexible, optimized erase architecture for code +
data storage applications
• Uniform 256-Byte page erase
• Uniform 4-KByte block erase
• Uniform 32-KByte block erase
• Uniform 64-KByte block erase
• Full chip erase
• Flexible non-volatile block protection
• 1 x 128-byte factory-programmed unique
identifier
• 3 x 128-byte, One Time Programmable (OTP)
security registers
• Flexible programming
• Byte/Page program (1 to 256 Bytes)
• Single command page buffer direct ReadModify-Write (page write with inclusive erase)
• Flexible 256-byte SRAM page buffer
operation
• Sequential program mode capability
• Erase program suspend resumeSoftware
controlled Reset and Terminate commands
• Hardware reset option (via /HOLD pin)
• JEDEC hardware reset
• Low battery detect circuit
• Active interrupt device status capability
• Non-volatile status register configuration option
• JEDEC standard manufacturer and device ID
read methodology
• Serial Flash Discoverable Parameters (SFDP)
version 1.6
• Low power dissipation:
• 26 µA standby current (typical)
• 7 µA Deep Power-Down (DPD) current
(typical)
• 5 - 7 nA Ultra Deep Power Down (UDPD)
current (typical)
• 8.3 mA active read current (1-1-1 — 10 MHz)
• 9.2 mA program current
• 10.2 mA erase current
• User configurable and auto I/O pin drive levels
• Endurance: 100,000 program/erase cycles
• Data Retention: 20 years
• -40 oC to +85 oC operation
• Industry standard green (Pb/Halide-free/RoHS
Compliant) Package Options
• 8-lead SOIC (150-mil)
• 8-lead SOIC (208-mil)
• Die/Wafer — Contact Renesas Electronics for
more information