N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING

DESCRIPTION
The 2SK1485, N-channel vertical type MOS FET is a switching device
which can be driven directly by the output of ICs having a 5 V power source.
As the MOS FET has low on-state resistance and excellent switching
characteristics, it is suitable for driving actuators such as motors, relays,
and solenoids.

FEATURES
• Directly driven by ICs having a 5 V power source.
• Low on-state resistance
RDS(on)1 = 1.2 Ω MAX. (VGS = 4.0 V, ID = 0.5 A)
RDS(on)2 = 0.8 Ω MAX. (VGS = 10 V, ID = 0.5 A)
• Complementary to 2SJ199.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)