K3565 Fiches technique(PDF) - Toshiba Semiconductor

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K3565 Fiches technique (PDF) - Toshiba Semiconductor

K3565 Datasheet PDF - Toshiba Semiconductor


No de pièce	K3565

Télécharger	K3565 Télécharger

Taille du fichier	218.78 Kbytes

Page	6 Pages

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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Description

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV

K3565 Datasheet (PDF)

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Télécharger Fiches technique

K3565 Datasheet PDF - Toshiba Semiconductor


No de pièce	K3565

Télécharger	K3565 Click to download

Taille du fichier	218.78 Kbytes

Page	6 Pages

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

Logo

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV

K3565 Fiches technique (HTML) - Toshiba Semiconductor

K3565 Datasheet HTML 1Page - Toshiba Semiconductor

K3565 Datasheet HTML 2Page - Toshiba Semiconductor

K3565 Datasheet HTML 3Page - Toshiba Semiconductor

K3565 Datasheet HTML 4Page - Toshiba Semiconductor

K3565 Datasheet HTML 5Page - Toshiba Semiconductor

K3565 Datasheet HTML 6Page - Toshiba Semiconductor

K3565 Détails du produit

Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 4.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 720 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Numéro de pièce similaire - K3565

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	k3565	232Kb / 6P	Switching Regulator Applications
Toshiba Semiconductor	K3565	249Kb / 6P	Silicon N Channel MOS Type Switching Regulator Applications
EPCOS	K3565	105Kb / 8P	IF Filter for Quasi/Split Sound Applications 38,90 MHz
Toshiba Semiconductor	K3565	341Kb / 3P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)
EPCOS	K3565M	105Kb / 8P	IF Filter for Quasi/Split Sound Applications 38,90 MHz

Description similaire - K3565

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	SSM6N04FU	175Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
	TPC8114	168Kb / 4P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIV)
	2SK3763	96Kb / 6P	Field Effect Transistor Silicon N Channel MOS Type ( pi -MOSIV)
	TPC8115	2Mb / 4P	FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOSIV)
	TPCP8202	235Kb / 7P	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)
	TK25A10K3	312Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
	K15A50D	256Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOS)
	2SK4106	181Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2009-09-29
	K4110	199Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2009-09-29
	K8A55DA	297Kb / 6P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) 2013-11-01

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