Features
 High speed switching
 Tight parameter distribution
 Safe paralleling
 Low thermal resistance
 Short-circuit rated

Applications
 Motor control
 UPS
 PFC

Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the H series of
IGBTs, which represents an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
switching frequency converters. Furthermore, a
slightly positive VCE(sat) temperature coefficient
and very tight parameter distribution result in
safer paralleling operation.