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K4X51163PC Fiches technique (PDF) - Samsung semiconductor

K4X51163PC Datasheet PDF - Samsung semiconductor
No de pièce K4X51163PC
Télécharger  K4X51163PC Télécharger
Taille du fichier   217.36 Kbytes
Page   23 Pages
Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 32M x16 Mobile-DDR SDRAM

K4X51163PC Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
K4X51163PC Datasheet PDF - Samsung semiconductor

No de pièce K4X51163PC
Télécharger  K4X51163PC Click to download

Taille du fichier   217.36 Kbytes
Page   23 Pages
Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Description 32M x16 Mobile-DDR SDRAM

K4X51163PC Fiches technique (HTML) - Samsung semiconductor


K4X51163PC Détails du produit

FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• 1 /CS
• 1 CKE
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
   - CAS Latency ( 2, 3 )
   - Burst Length ( 2, 4, 8, 16 )
   - Burst Type (Sequential & Interleave)
   - Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
   - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM, UDM for write masking only.
• Auto refresh duty cycle
   - 7.8us for -25 to 85 °C




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