1-2000 MHz, 4 W, 28 V LATERAL N-CHANNEL RF POWER MOSFET

Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

• Typical Two-Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP
   Power Gain — 18 dB
   Drain Efficiency — 33%
   IMD — -34 dBc
• Typical Two-Tone Performance @ 900 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP
   Power Gain — 19 dB
   Drain Efficiency — 33%
   IMD — -39 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip RF Feedback for Broadband Stability
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.