DESCRIPTION
The TCET111., TCET111.G consists of a phototransistor
optically coupled to a gallium arsenide infrared-emitting
diode in a 4 pin plastic dual inline package.

APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I to IV at mains voltage  300 V
• for appl. class I to III at mains voltage  600 V according
to DIN EN 60747-5-5 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface

FEATURES
• CTR offered in 9 groups
• Isolation materials according to UL 94 V-0
• Pollution degree 2
(DIN / VDE 0110 / resp. IEC 60664)
• Climatic classification 55 / 100 / 21
(IEC 60068 part 1)
• Special construction: therefore, extra low coupling
capacity of typical 0.2 pF, high common mode rejection
• Low temperature coefficient of CTR
• Temperature range -40 °C to +110 °C
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test voltage)
Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak
• Creepage current resistance according to VDE 0303/
IEC 60112 comparative tracking index: CTI  175
• Thickness through insulation  4 mm
• External creepage distance > 8 mm
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

AGENCY APPROVALS
• UL
• cUL
• DIN EN 60747-5-5 (VDE 0884)
• BSI: EN 62368-1:2014