Fabricant | No de pièce | Fiches technique | Description |
Renesas Technology Corp |
2SK160
|
490Kb / 8P |
JUNCTION FIELD EFFECT TRANSISTORS
1984 |
Siemens Semiconductor G... |
BF246A
|
127Kb / 6P |
N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
|
Micro Electronics |
2N5484
|
150Kb / 1P |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS
|
Siemens Semiconductor G... |
BF245A
|
178Kb / 7P |
N-Channel junction field-Effect Transistors
|
New Jersey Semi-Conduct... |
BF245A
|
51Kb / 1P |
IM-Channel Junction Field-Effect Transistors
|
Guangdong Kexin Industr... |
2SK1109
|
1,009Kb / 3P |
N-Channel Junction Field Effect Transistors
|
NXP Semiconductors |
BF545A
|
100Kb / 12P |
N-channel silicon junction field-effect transistors
1996 Jul 29 |
BF556A
|
100Kb / 11P |
N-channel silicon junction field-effect transistors
1996 Jul 29 |
Micro Electronics |
J111
|
45Kb / 1P |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS
|
New Jersey Semi-Conduct... |
2N3329
|
86Kb / 1P |
P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
|