The FODM291 series consist of a gallium arsenide infrared emitting
diode driving a phototransistor. It built in a compact, half−pitch,
mini−flat, 4−pin package. The lead pitch is 1.27 mm.

Features
• Current Transfer Ratio Ranges from 80 to 600%
at IF = 5 mA, VCE = 5 V, TA = 25°C
♦ FODM291A − 80 to 160%
♦ FODM291B − 130 to 260%
♦ FODM291C − 200 to 400%
♦ FODM291D − 300 to 600%
• Safety and Regulatory Approvals:
♦ UL1577, 3750 VACRMS for 1 min
♦ DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage
(Pending)
• Applicable to Infrared Ray Reflow, 260°C

Typical Applications
• Primarily Suited for DC−DC Converters
• For Ground Loop Isolation, Signal to Noise Isolation
• Communications – Adapters, Chargers
• Consumer – Appliances, Set Top Boxes
• Industrial – Power Supplies, Motor Control, Programmable Logic
Control