IRFD210 Fiches technique(PDF)

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IRFD210 Fiches technique (PDF) - Harris Corporation

IRFD210 Datasheet PDF - Harris Corporation


No de pièce	IRFD210

Télécharger	IRFD210 Télécharger

Taille du fichier	360.56 Kbytes

Page	6 Pages

Fabricant	HARRIS [Harris Corporation]

Site Internet	http://www.harris.com

Logo

Description

0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

IRFD210 Datasheet (PDF)

Télécharger Fiches technique


No de pièce	IRFD210

Télécharger	IRFD210 Click to download

Taille du fichier	360.56 Kbytes

Page	6 Pages

Fabricant	HARRIS [Harris Corporation]

Site Internet	http://www.harris.com

Logo

Description	0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

IRFD210 Fiches technique (HTML) - Harris Corporation

IRFD210 Datasheet HTML 1Page - Harris Corporation

IRFD210 Datasheet HTML 2Page - Harris Corporation

IRFD210 Datasheet HTML 3Page - Harris Corporation

IRFD210 Datasheet HTML 4Page - Harris Corporation

IRFD210 Datasheet HTML 5Page - Harris Corporation

IRFD210 Datasheet HTML 6Page - Harris Corporation

IRFD210 Détails du produit

These are advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Features
• 0.6A and 0.45A, 150V and 200V
• rDS(ON) = 1.5Ω and 2.4Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards"

Numéro de pièce similaire - IRFD210

Fabricant	No de pièce	Fiches technique	Description
Intersil Corporation	IRFD210	52Kb / 6P	0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET
International Rectifier	IRFD210	173Kb / 6P	Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
Vishay Siliconix	IRFD210	1Mb / 8P	Power MOSFET S-81263-Rev. A, 21-Jul-08
Vishay Siliconix	IRFD210	843Kb / 9P	Power MOSFET 01-Jan-2022
International Rectifier	IRFD210PBF	1Mb / 8P	HEXFET Power MOSFET

More results

Description similaire - IRFD210

Fabricant	No de pièce	Fiches technique	Description
Intersil Corporation	IRF220	68Kb / 7P	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs
	IRF230	69Kb / 7P	8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs
	IRF9230	72Kb / 7P	-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs
	RFL1N12	43Kb / 5P	1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs
	RFP2N12	35Kb / 5P	2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
	RFL4N12	31Kb / 4P	4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs
	IRFD1Z0	57Kb / 6P	0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs
	RFL1N18	43Kb / 5P	1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs
	RFK25N18	42Kb / 5P	25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs
	RFM12N18	35Kb / 4P	12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

More results

À propos de Harris Corporation

Harris Corporation was a Florida-based technology company that specialized in communications and information technology. The company was founded in 1895 and went through several iterations over the years, including mergers and acquisitions.

In 2019, Harris Corporation merged with L3 Technologies to form L3Harris Technologies, which is now one of the largest defense companies in the world. The company provides a wide range of products and services in the areas of aerospace, defense, communications, and intelligence.

Some of Harris Corporation's previous areas of focus included tactical radios, satellite communications systems, air traffic control systems, and cybersecurity solutions. The company's customers included the U.S. military, government agencies, and commercial organizations around the world.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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