Description
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases. Product status link STPSC12065-Y Product summary IF(AV) 12 A VRRM 650 V Tj (max.) 175 °C VF (typ.) 1.30 V Automotive 650 V, 12 A, silicon carbide power Schottky diode STPSC12065-Y Datasheet DS11624 - Rev 4 - December 2018 For further information contact your local STMicroelectronics sales office.

Features
■ AEC-Q101 qualified
■ No or negligible reverse recovery
■ Switching behavior independent of temperature
■ Dedicated to PFC applications
■ High forward surge capability
■ PPAP capable
■ Operating Tj from -40 °C to 175 °C
■ VRRM guaranteed from -40 to +175 °C
■ D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top coating)
■ ECOPACK® 2 compliant

Applications
■ On board charger