General Description

The AO4610 uses advanced trench technology MOSFETs to provide excellent RDS(ON)and low gate charge. The

complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the n-channel FET to minimize body diode losses.  Standard Product AO4610 is Pb-free (meets ROHS & Sony 259 specifications). AO4610L is a Green Product ordering option. AO4610 and AO4610L are electrically identical.

Features

n-channel p-channel

VDS(V) = 30V -30V

ID= 8.5A(VGS=10V) -7.1A(VGS= -10V)

RDS(ON)  RDS(ON)

< 18mΩ(VGS=10V) < 25mΩ(VGS= -10V)

< 28mΩ(VGS=4.5V) < 40mΩ(VGS= -4.5V)

VF<0.5V@1A