MS2203 Fiches technique(PDF) - Advanced Power Technology

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MS2203 Fiches technique (PDF) - Advanced Power Technology

MS2203 Datasheet PDF - Advanced Power Technology


No de pièce	MS2203

Télécharger	MS2203 Télécharger

Taille du fichier	196.17 Kbytes

Page	5 Pages

Fabricant	ADPOW [Advanced Power Technology]

Site Internet	http://www.advpowertech.com

Logo

Description

RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MS2203 Datasheet (PDF)

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Télécharger Fiches technique

MS2203 Datasheet PDF - Advanced Power Technology


No de pièce	MS2203

Télécharger	MS2203 Click to download

Taille du fichier	196.17 Kbytes

Page	5 Pages

Fabricant	ADPOW [Advanced Power Technology]

Site Internet	http://www.advpowertech.com

Logo

Description	RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

MS2203 Fiches technique (HTML) - Advanced Power Technology

MS2203 Datasheet HTML 1Page - Advanced Power Technology

MS2203 Datasheet HTML 2Page - Advanced Power Technology

MS2203 Datasheet HTML 3Page - Advanced Power Technology

MS2203 Datasheet HTML 4Page - Advanced Power Technology

MS2203 Datasheet HTML 5Page - Advanced Power Technology

MS2203 Détails du produit

DESCRIPTION:
The MS2203 is a common emitter, silicon NPN, microwave transistor designed for Class A driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.

Features
• 1090 MHz
• 18 VOLTS
• POUT = 0.6 WATTS
• GP = 10.8 dB MINIMUM
• CLASS A OPERATION
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• COMMON EMITTER CONFIGURATION

Numéro de pièce similaire - MS2203

Fabricant	No de pièce	Fiches technique	Description
Microsemi Corporation	MS2203	109Kb / 5P	RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
New Jersey Semi-Conduct...	MS2203	121Kb / 2P	CLASS A OPERATION

Description similaire - MS2203

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	AM0608-450	82Kb / 3P	AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Aug-1992
	AM80912-015	94Kb / 6P	AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Mar-1994
	AM80912-085	66Kb / 5P	AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Aug-1992
	MSC1000M	100Kb / 5P	AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS Oct-1992
Advanced Power Technolo...	MS2210	98Kb / 3P	RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
	MSC1015MP	96Kb / 3P	RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
	MSC1450M	115Kb / 4P	RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
	MS2205	96Kb / 3P	RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
	MS2393	207Kb / 5P	RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Microsemi Corporation	MSC1090M	60Kb / 3P	RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

À propos de Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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