DESCRIPTION:
Maxwell Technologies’ 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit.
   
FEATURES:
• Single 5.0 V supply
• Excellent Single Event Effect
    · - SEL
        TH: > 60 MeV/mg/cm2
    · - SEU
        TH: = 37 MeV/mg/cm2
    - SEU saturated cross section: 2E-6 cm2/bit
• Organization:
    - Memory cell array: (4M + 128k) bit x 8bit
    - Data register: (512 + 16) bit x 8bit
• Automatic program and erase
    - Page program: (512 + 16) Byte
    - Block erase: (8K + 256) Byte
    - Status register
• 528-Byte page read operation
    - Random access: 10 µ s (max)
    - Serial page access: 50 ns (min)
• Fast write cycle time
    - Program time: 250 µ s (typ)
    - Block erase time: 2 ms (typ)
• Command/address/data multiplexed I/O port
• Hardware data protection
    - Program/erase lockout during power transitions
• Reliable CMOS floating-gate technology
    - Endurance: 1,000,000 program/erase cycles
    - Data retention: 10 years
• Command register operation
• 44 pin flat package