| Fabricant | No de pièce | Fiches technique | Description |
 Mitsubishi Electric Sem... |
M5M51016BTP-12VL-I
|
75Kb / 7P |
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
 Toshiba Semiconductor |
TC514100AP
|
635Kb / 21P |
4,194,304 WORD x BIT DYNAMIC RAM
|
|
TC514100APL
|
632Kb / 21P |
4,194,304 WORD x BIT DYNAMIC RAM
|
|
TC514260BJ
|
1Mb / 29P |
262,144 WORD X 16 BIT DYNAMIC RAM
|
 Hitachi Semiconductor |
HM5118160B
|
1Mb / 27P |
1048576-word x 16-bit Dynamic Random Access Memory
|
|
HM5118165A
|
1Mb / 27P |
1048576-word x 16-bit Dynamic Random Access Memory
|
|
HM5118165B
|
1Mb / 31P |
1048576-word x 16-bit Dynamic Random Access Memory
|
 Toshiba Semiconductor |
TC511664B
|
1Mb / 34P |
65,536 WORD x 16 BIT DYNAMIC RAM
|
 Hitachi Semiconductor |
HM514170D
|
271Kb / 33P |
262,144-word x 16-bit Dynamic RAM
|
 Toshiba Semiconductor |
TC51V4260DFTS-60
|
426Kb / 7P |
262,144 WORD X 16 BIT DYNAMIC RAM
|