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TPD1032F Fiches technique (PDF) - Toshiba Semiconductor

TPD1032F Datasheet PDF - Toshiba Semiconductor
No de pièce TPD1032F
Télécharger  TPD1032F Télécharger
Taille du fichier   112.46 Kbytes
Page   5 Pages
Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

TPD1032F Datasheet (PDF)

Go To PDF Page Télécharger Fiches technique
TPD1032F Datasheet PDF - Toshiba Semiconductor

No de pièce TPD1032F
Télécharger  TPD1032F Click to download

Taille du fichier   112.46 Kbytes
Page   5 Pages
Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor
Description Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit

TPD1032F Fiches technique (HTML) - Toshiba Semiconductor


TPD1032F Détails du produit

2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive

The TPD1032F is a 2-IN-1 low-side switch.
The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions.

Features
• Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip.
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
• Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C)
• Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 20 V, Tch = 25°C)
• Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40~ 110°C)
• 8-pin SOP package for surface with embossed-tape packing.




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