Description
This is a high voltage fast switching NPN power
transistor manufactured in multi epitaxial planar
technology. It uses a cellular emitter structure with
planar edge termination to enhance switching
speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.

Features
■ High voltage capability
■ Very high switching speed

Applications
Four lamp electronic ballast for:
■ 120 V mains in push-pull configuration
■ 277 V mains in half bridge current feed configuration