TPC8210 Fiches technique(PDF) - Toshiba Semiconductor

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TPC8210 Fiches technique (PDF) - Toshiba Semiconductor

TPC8210 Datasheet PDF - Toshiba Semiconductor


No de pièce	TPC8210

Télécharger	TPC8210 Télécharger

Taille du fichier	229.1 Kbytes

Page	7 Pages

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

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Description

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPC8210 Datasheet (PDF)

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Télécharger Fiches technique

TPC8210 Datasheet PDF - Toshiba Semiconductor


No de pièce	TPC8210

Télécharger	TPC8210 Click to download

Taille du fichier	229.1 Kbytes

Page	7 Pages

Fabricant	TOSHIBA [Toshiba Semiconductor]

Site Internet	http://www.semicon.toshiba.co.jp/eng

Logo

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPC8210 Fiches technique (HTML) - Toshiba Semiconductor

TPC8210 Datasheet HTML 1Page - Toshiba Semiconductor

TPC8210 Datasheet HTML 2Page - Toshiba Semiconductor

TPC8210 Datasheet HTML 3Page - Toshiba Semiconductor

TPC8210 Datasheet HTML 4Page - Toshiba Semiconductor

TPC8210 Datasheet HTML 5Page - Toshiba Semiconductor

TPC8210 Datasheet HTML 6Page - Toshiba Semiconductor

TPC8210 Datasheet HTML 7Page - Toshiba Semiconductor

TPC8210 Détails du produit

Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PC Applications

• Low drain−source ON resistance: RDS (ON) = 11 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 13 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Numéro de pièce similaire - TPC8210

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	TPC8210	275Kb / 7P	Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
VBsemi Electronics Co.,...	TPC8210	1Mb / 9P	Dual N-Channel 30 V (D-S) MOSFET
Toshiba Semiconductor	TPC8210	275Kb / 7P	Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications

Description similaire - TPC8210

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	TPC8110	406Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPC8211	171Kb / 4P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	TPCP8402	162Kb / 6P	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
	TPC8014	213Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	TPCF8001	242Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	TPCF8102	212Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCF8201	232Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	TPCF8301	196Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
	TPCP8201	250Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
	SSM3K15AFU	236Kb / 5P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

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